| 摘要 |
PURPOSE:To reduce a proximity effect, to inhibit an extent in the cross direction and to form a pattern having high dimensional accuracy and a high contrast by decreasing a developing rate before or on its mid-way of development when a positive type resist is developed and the pattern is shaped. CONSTITUTION:A base body (such as a semiconductor substrate, a metallic film on the substrate, an insulating film, etc.), 1 to be processed is surface- treated, and the adhesive properties of a positive type resist are improved. A positive type electron-beam resist film 2 is applied, and heat treatment for ten min at 100 deg.C is executed for scattering a solvent. The positive type resist film 2 is irradiated selectively with electron beams 3 to draw a desired pattern, and a latent image 4 is shaped. The whole is dipped in a developer, and static development is conducted. Development is interrupted and the whole is washed by water, and moisture is dried by a nitrogen blow. Consequently, a surface insoluble layer 5 is formed onto an exposed section. Development is performed again, and the latent image 4 is dissolved. The number of the repeated processes of the development, washing by water and drying is executed twice to ten times according to film thickness, thus completely shaping the pattern. |
