| 发明名称 |
A semiconductor laser device. |
| 摘要 |
<p>A semiconductor laser device comprises a laminated crystal structure which includes a Ga1-yAlyAs optical guiding layer and a Ga1-zAlzAs (z>y) cladding layer in this sequence, the cladding layer is formed on both a Ga1-xAlxAs (0</=x</=0.1 and x<y) layer and the optical guiding layer. The AlAs mole fraction y of the optical guiding layer is greater than 0.1.</p> |
| 申请公布号 |
EP0306315(A2) |
申请公布日期 |
1989.03.08 |
| 申请号 |
EP19880308119 |
申请日期 |
1988.09.01 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
MATSUI, SADAYOSHI;TANEYA, MOTOTAKA;MATSUMOTO, MITSUHIRO;HOSOBA, HIROYUKI;TAKIGUCHI, HARUHISA;KUDO, HIROAKI |
| 分类号 |
H01S5/00;H01S5/12;H01S5/125;H01S5/20;H01S5/223;H01S5/323;H01S5/40 |
主分类号 |
H01S5/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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