Manufacturing method of semiconductor device having CCD and peripheral circuit.

摘要

In a method of manufacturing a semiconductor device which has a CCD and its peripheral circuit on the same substrate, a buried channel (4) for a CCD and an impurity diffusion region (5) for peripheral circuit transistors are formed at the same time by a single process, the impurity diffusion region (5) being of the same conductivity type as that of the buried channel (4). Thus, it becomes possible to make high the concentration of the impurity diffusion region and the threshold value of the peripheral circuit transistors.