| 摘要 |
PURPOSE:To obtain a titled sputtering target with which a desired composition of a thin Te-Ge-Sb film is easily obtainable by forming a uniformly ground mixture consisting of at least Te, Ge and Sb by hot pressing, etc., to an alloy state, then subjecting the mixture to grinding, mixing and further to hot pressing. CONSTITUTION:The metal groups consisting of at least Te, Ge and Sb are ground and mixed by a ball mill to form the uniform mixture. This mixture is hot pressed in an inert gaseous atmosphere of N2, etc., or is heated and melted in a reduced pressure atmosphere or inert gaseous atmosphere and is thereby made into the alloy state. This mixture is cooled. The treated matter in the alloy state is ground, mixed and hot pressed to form a molding and the desired sputtering target for forming information recording thin film is obtd. The contents of the respective elements constituting the target are preferably 40-70at.% Te, 5-25at.% Ge, and 20-45at.% Sb. |
