| 摘要 |
PURPOSE:To form a thin film transistor having a less reduction of drain current with time and having a higher field-effect mobility, by regulating the temperature of an insulating substrate upon formation of a silicon nitride insulating film and the one upon formation of an amorphous silicon semiconductor film respectively to be in predetermined ranges. CONSTITUTION:An insulating substrate 1 includes thereon a thin film gate electrode 2, a silicon nitride insulating film 3, an amorphous silicon semiconductor film 4, and thin film source and drain electrodes 5, 6 formed in succession. The silicon nitride insulating film 3 is formed at a temperature of the insulating substrate 1 of 260-400 deg.C while the amorphous silicon semiconductor film 4 formed at a temperature of the same of 200-250 deg.C. In addition, the silicon nitride insulating film 3 is preferably a silicon nitride film prepared using stock gas in a ratio of ammonia gas to silane gas. Hereby, a thin film transistor can be formed having a drain current reduced with the elapse of time being reduced and having a high field-effect mobility. |
