| 发明名称 |
INTEGRATED CIRCUIT CONTAINING A SEMICONDUCTIVE SUBSTRATE HAVING FIELD ISOLATION REGIONS AND ELECTRICALLY CONDUCTIVE REGIONS |
| 摘要 |
<p>An integrated circuit containing a refractory metallic silicide beneath a field isolation region and in electrical contact with electrical conductive regions of active impurity dopants in a semiconductive substrate; and process for the fabrication thereof.</p> |
| 申请公布号 |
EP0068154(B1) |
申请公布日期 |
1989.03.08 |
| 申请号 |
EP19820104709 |
申请日期 |
1982.05.28 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ISAAC, RANDALL DUANE;NING, TAK HUNG;YANG, DENNY DUAN-LEE |
| 分类号 |
H01L27/10;H01L21/3205;H01L21/331;H01L21/74;H01L21/76;H01L21/762;H01L21/8242;H01L23/52;H01L23/535;H01L27/108;H01L29/06;H01L29/73;(IPC1-7):H01L21/76 |
主分类号 |
H01L27/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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