| 摘要 |
<p>PURPOSE:To manufacture a mask easily while enabling transfer hardly generating strain by irradiating the mask having a pattern reflecting X-rays with X- rays, irradiating a wafer with the reflected X-rays and transferring the pattern of the mask to the wafer. CONSTITUTION:The surface of a mask 9 is irradiated obliquely with X-rays 1 through a reflecting mirror 2 and a filter 3 and X-rays are reflected, a wafer 4 is irradiated with X-rays through an imaging optical system 7, and the pattern of the mask 9 is transferred to the wafer 4. The imaging optical system 7 represents a reduction projection optical system by a reflecting optical system. With the mask 9, tungsten and carbon are deposited alternately on the surface of an silicon substrate 9a in thickness of approximately 1-2mm, and a patterned multilayer film 9b is shaped. Each layer of tungsten and carbon forms Bragg reflection and is shaped in constant thickness such as 4-12nm, and the number of layers is brought to twelve in total. Tungsten and carbon are deposited through ion beam sputtering, etc., and the film 9b is patterned through normal lithography. The mask 9 is easily manufactured owing to the deposition and patterning and the imaging optical system 7 as the reduction projection optical system.</p> |
