MANUFACTURE OF TRANSPARENT CONDUCTIVE FILM FOR AMORPHOUS SILICON SOLAR CELL

摘要

PURPOSE:To improve a photoelectric current characteristic and reduce the cost of manufacture, by forming an amorphous silicon layer using a tin oxide transparent conductive film which has been subjected to a plasma processing at a predetermined substrate temperature under reduced pressure in a hydrogen atmosphere. CONSTITUTION:A fluorine doped tin oxide film (SnO2:F film) is formed by allowing a tin compound and a compound involving fluorine be brought into contact with a transparent substrate heated to a high temperature and thereby carrying out a pyrolysis oxidation reaction. Thereafter, an amorphous silicon film is formed by exposing the SiO2:F film to plasma in the hydrogen atmosphere under reduced pressure at a substrate temperature lower than 125 deg.C, and an aluminum rear surface electrode is deposited on said film to form an amorphous silicon p-i-n hetero junction solar cell. Hereby, a short-circuit current in cell characteristics can be increased by about 1-4%.