发明名称 |
Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 40 atomic %. |
摘要 |
<p>An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least said i-type semiconductor layer comprises a member selected from the group consisting of a ZnSe:H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and a ZnSe1-xTex:H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and also containing the selenium atoms and the tellurium atoms in a Se/Te quantitative ratio of 1:9 to 3:7 in terms of number of atoms. The pin junction photovoltaic element exhibits an improved photoelectric conversion efficiency for short-wavelength light and has a high open-circuit voltage. The pin junction photovoltaic element does not cause any undesirable light-induced fatigue even upon continuous use for a long period of time.</p> |
申请公布号 |
EP0306297(A2) |
申请公布日期 |
1989.03.08 |
申请号 |
EP19880308068 |
申请日期 |
1988.08.31 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
NAKAGAWA, KATSUMI;KANAI, MASAHIRO;ISHIHARA, SHUNICHI;ARAO, KOZO;FUJIOKA, YASUSHI;SAKAI, AKIRA;MURAKAMI, TSUTOMU |
分类号 |
H01L31/0296;H01L31/077;H01L31/18 |
主分类号 |
H01L31/0296 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|