| 摘要 |
PURPOSE: To maximally fill up insulator gaps by using the via filling and stud forming metallization techniques to form a conductive structure on a substrate. CONSTITUTION: A stud mask structure 14 is formed on a conductive layer 12, and exposed part of a metal layer 12 through this mask structure is removed, without hardly etching a substrate 10 below it. The substrate is sputter-etched to form positive tapers at the side walls of the mask 14, and a thick passivation layer 16 is deposited on the substrate to planarize until the upper surface of the mask 14 is exposed. It is exposed to a wet etchant which is hardly etches a surrounding oxide 16 or lower-side metal 12 to remove the mask 14. A second sputter etching is applied for a time which is sufficient to convert negative side wall slopes to positive ones. Vias to be filled are only half as shallow as the vias in the prior art and have positive side wall slopes and hence can be filled up with a metal, without causing voids.
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