| 摘要 |
In an embedded type semiconductor laser, at least three layers of a first conduction type clad layer, a quantum well active layer which contains a first or second conduction type or a pn junction, and a second conduction type clad layer, are grown successively on a first conduction type substrate. A high concentration impurity doped layer is provided excluding a predetermined striped region, situated adjacent to the active layer. An impurity diffusion is carried out by heat treatment which diffuses dopant from the high concentration impurity doped layer to the active layer.
|
