发明名称 Static induction transistor and integrated circuit device using same
摘要 A static induction transistor (SIT) which is made to operate with a forward gate bias by maintaining the width of the channel region at an appropriate value. Such an improved SIT is used as the inverter transistor in a merged transistor logic (MTL) semiconductor IC (integrated circuit) to reduce the time delay-power product by an order or more. The collector region of a bipolar load transistor is continuous to or also serves as the gate region of the inverter SIT. A plurality of channel regions are formed penetrating through this collection/gate region. This SIT is simple in structure, which enables a marked increase in the integration density.
申请公布号 US4811064(A) 申请公布日期 1989.03.07
申请号 US19870009017 申请日期 1987.01.28
申请人 ZAIDAN HOJIN HANDOTAI KENKYU SHINKOKAI 发明人 NISHIZAWA, JUN-ICHI;WILAMOWSKI, BOGDAN M.
分类号 H01L29/80;H01L21/331;H01L21/8222;H01L27/02;H01L27/06;H01L27/07;H01L29/08;H01L29/10;H01L29/73;H01L29/732;H01L29/735;H01L29/739;H03K19/091;(IPC1-7):H01L27/04 主分类号 H01L29/80
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