发明名称 |
Static induction transistor and integrated circuit device using same |
摘要 |
A static induction transistor (SIT) which is made to operate with a forward gate bias by maintaining the width of the channel region at an appropriate value. Such an improved SIT is used as the inverter transistor in a merged transistor logic (MTL) semiconductor IC (integrated circuit) to reduce the time delay-power product by an order or more. The collector region of a bipolar load transistor is continuous to or also serves as the gate region of the inverter SIT. A plurality of channel regions are formed penetrating through this collection/gate region. This SIT is simple in structure, which enables a marked increase in the integration density.
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申请公布号 |
US4811064(A) |
申请公布日期 |
1989.03.07 |
申请号 |
US19870009017 |
申请日期 |
1987.01.28 |
申请人 |
ZAIDAN HOJIN HANDOTAI KENKYU SHINKOKAI |
发明人 |
NISHIZAWA, JUN-ICHI;WILAMOWSKI, BOGDAN M. |
分类号 |
H01L29/80;H01L21/331;H01L21/8222;H01L27/02;H01L27/06;H01L27/07;H01L29/08;H01L29/10;H01L29/73;H01L29/732;H01L29/735;H01L29/739;H03K19/091;(IPC1-7):H01L27/04 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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