Photoelectric conversion device

摘要

A photoelectric conversion device comprises a photodiode comprising a metallic electrode formed of a metal capable of forming a Schottky junction together with amorphous silicon, such as Cr or Ni, a transparent electrode formed of ITO or the like, and an i-type hydrogenated amorphous silicon layer sandwiched in between the metallic electrode and the transparent electrode. A bias voltage is applied across the metallic electrode and the transparent electrode so that the metallic electrode is biased to a negative potential relative to the transparent electrode. A Schottky barrier formed in the interface between the metallic electrode and the i-type hydrogenated amorphous silicon layer is used as an electron blocking layer. Thus, the dark current is suppressed on a low level and the photoelectric conversion device is able to operate at a high S/N ratio.