发明名称 |
Semiconductor integrated light emitting device |
摘要 |
A semiconductor integrated light emitting device is disclosed which comprises a light emitting waveguide including a light emitting layer, and an external waveguide directly coupled to the light emitting waveguide. In accordance with the present invention, the light emitting waveguide and the external waveguide are mutually laminated in the vicinity of a region where they are directly coupled together. The intensity of the optical output from the light emitting waveguide is modulated in the external waveguide by the electroabsorption effect.
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申请公布号 |
US4811352(A) |
申请公布日期 |
1989.03.07 |
申请号 |
US19880147229 |
申请日期 |
1988.01.22 |
申请人 |
KOKUSAI, DENSHIN DENWA KABUSHIKI KAISHA |
发明人 |
SUZUKI, MASATOSHI;AKIBA, SHIGEYUKI;TANAKA, HIDEAKI;KUSHIRO, YUKITOSHI |
分类号 |
H01L27/15;H01S5/00;H01S5/026;H01S5/12;H01S5/125;(IPC1-7):H01S3/19;H01L33/00 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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