| 摘要 |
A semiconductor device, such as a MOSFET or IGT, with a deep base region having a high dopant concentration at least as high as 5x1019 atoms per cubic centimeter and a method of fabrication are disclosed. The novel method involves formation of the deep base region at a later stage in the fabrication and reduces the leaching of dopant from the deep base region, as well as achieving greater control over the dopant concentration in the deep base region. Further, the increased dopant concentration in the deep base region lowers the base shunt resistance of the device to provide improved electrical ruggedness. For IGTs, parasitic thyristor action is reduced.
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