发明名称 COMPOSITION FOR FORMATION OF RESISTANCE FILM
摘要 <p>PURPOSE:To obtain a resistance film without a bubble by a method wherein a content rate of a ruthenium oxide powder, a glass powder and a ceramic powder in a solid component is specified so that the generation of a gas can be restrained by suppressing a reaction of a substrate with glass. CONSTITUTION:A composition contains 8-60wt.% of a ruthenium oxide powder, 40-80wt.% of a glass powder generating a crystal phase during a baking operation at 750-900 deg.C and less than 52wt.% of a ceramic powder in a solid component. This composition is coated between electrodes and is baked; a resistance film is formed. As a result, a bubble is not recognized inside the resistance film; the resistance film whose coefficient of thermal expansion is small is obtained.</p>
申请公布号 JPS6459802(A) 申请公布日期 1989.03.07
申请号 JP19870215342 申请日期 1987.08.31
申请人 SUMITOMO METAL MINING CO LTD 发明人 KUBOTA TSUTOMU;SEKIHARA OSAMU;ISHIGAME SHIGEHARU
分类号 H01C7/00;C09D5/24 主分类号 H01C7/00
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