| 摘要 |
<p>PURPOSE:To eliminate such a step as to generate dielectric breakdown and to improve reliability by forming an insulator layer which exhibits a ferroelectric property on a substrate at the film thickness larger than the thickness of a 1st electrode and forming the 2nd electrode on the insulator layer. CONSTITUTION:The 1st electrode 13 consisting of a transparent conductive film made of ITO, etc., is formed at a thickness d1 on the insulating substrate 12 consisting of a glass substrate. The ferroelectric material layer 14 consisting of the copolymer of vinylidene fluoride and trifluoroethylene is coated at the thickness d2 larger than the thickness of the 1st electrode 13 on the insulating substrate 12 and the insulating substrate 12 is held horizontal to flatten the surface of the ferroelectric material layer 14. The 2nd electrode 15 consisting or Cr is then formed on the ferroelectric material layer 14. The generation of the dielectric breakdown by concn. of electric fields to the edge part of the 1st electrode 13 when a voltage is impressed to the device is thereby obviated and the reliability is improved.</p> |
