发明名称 Monolithic pin diode and method for its manufacture
摘要 A monolithic semiconductor device that provides a diode having PIN diode characteristics. The diode has anode and cathode mesas having contacts in substantially the same plane to facilitate automatic bonding. One of the contacts is insulated from its associated mesa and has a conductive layer that extends between the mesas and through an insulating layer to make direct contact with the substrate, thereby isolating the flow of current from any intervening I regions. The conductive layer may include a portion of narrow cross section, to function as a fuse.
申请公布号 US4811080(A) 申请公布日期 1989.03.07
申请号 US19880151331 申请日期 1988.02.02
申请人 FEI MICROWAVE, INC. 发明人 RICHARDS, JOHN G.
分类号 H01L27/08;H01L29/861;H01L29/868;(IPC1-7):H01L29/12 主分类号 H01L27/08
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