发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent a crack from being caused while a thermal stress is absorbed by using a coupling particle and to enhance heat-dissipating performance by forming a gap between substrates by a method wherein, when the semiconductor substrates for lamination use are laminated three-dimensionally, the semiconductor substrates are laminated mutually by using the coupling particle. CONSTITUTION:A conductive coupling particle composed of a metallic substance which has been filled into a hard cylindrical body and a hard cylindrical body, whose inside diameters differ from each other, in such a way that the particle protrudes partly from an end part at the side of a smaller inside diameter is fixed to a pad 3 of a coupling hole 7 in a semiconductor substrate 6 for lamination use. As this fixing method, the semiconductor substrate 6 for lamination use is set on a retention stage 35 in such a way that an opening of the coupling hole 7 faces upward; after that, a gun barrel 32 is aligned with the coupling hole 7 in the semiconductor substrate 6. A temperature of the retention stage 35 is increased to 300 deg.C by using a built-in heater 34; after that, the outside of the gun barrel 32 is maintained at about 350 deg.C by using a heater 31; a conductive coupling particle 19 is inserted into the gun barrel 32 and is discharged with accelerated velocity while the coupling particle 19 is being heated by compressed nitrogen 36. The semiconductor substrate 6 for lamination use where the conductive coupling particle 19 has been fixed to an exposed part of the pad 3 corresponding to the coupling hole 7 via a protruding part 17 is thereby obtained.
申请公布号 JPS6459845(A) 申请公布日期 1989.03.07
申请号 JP19870216622 申请日期 1987.08.31
申请人 TOSHIBA CORP 发明人 OKUMURA KATSUYA
分类号 H01L21/60;H01L21/321;H01L23/52;H01L25/065;H01L25/07;H01L25/18;H01L27/00 主分类号 H01L21/60
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