| 摘要 |
PURPOSE:To obtain a thin film transistor (TFT) driving a liquid crystal display showing good image characteristics, by specifying a film thickness of an amorphous silicon semiconductor comprising phosphorus which improves an ohmic contact between a semiconductor layer and source and drain electrodes of the TFT for constituting an image display apparatus in combination with a liquid crystal. CONSTITUTION:A gate electrode 2 comprising chrome is formed on a glass substrate 1 and silicon nitride (4000A) serving as a gate insulating film 3, amorphous silicon (4000A) serving as a semiconductor layer 4, and amorphous silicon semiconductor layers 5a and 5b comprising phosphorus are sequentially and selectively deposited by a plasma chemical vapor deposition method, and aluminum serving as source and drain electrodes 6a and 6b is selectively formed to complete a TFT. At this time, by making the film thickness of the amorphous silicon semiconductor layer comprising phosphorus 80A-440A, a sufficient ON current and an ON/OFF ratio can be obtained and a liquid crystal display showing good image characteristics can be driven. |
