发明名称 MANUFACTURE OF THIN FILM TRANSISTOR ACTIVE MATRIX SUBSTRATE
摘要 <p>PURPOSE:To manufacture an active matrix substrate with a flat surface where there is no trouble even when thin film transistors, scanning wiring, and signal wiring are mounted by polishing away an unnecessary insulator sticking on the surface of the substrate when an insulating filler is charged in a pinhole part on the surface of the substrate. CONSTITUTION:A pinhole flawed part 16 is filled with the liquid filler and heat-treated in an acid or inert atmosphere to obtain an insulator 17. The filler is prepared by dissolving organic metal, etc., into a solvent, a glass substrate 18 is dipped, and deaeration is carried out with an ultrasonic wave or by vacuum suction, etc., to fill the pinhole flawed part 16. The insulator 17 formed swelling on the surface of the substrate 18 is polished away finally to charge the insulator 17 only in the flawed part selectively. Consequently, the transparent insulating substrate having no pinhole in the surface is obtained and the thin film active matrix substrate is manufactured which has no characteristic deterioration even when electrode wiring for thin film transistors, scanning, signals, etc., is provided.</p>
申请公布号 JPS6459214(A) 申请公布日期 1989.03.06
申请号 JP19870215403 申请日期 1987.08.31
申请人 HITACHI LTD 发明人 KANEKO HIROSHI;KONISHI NOBUTAKE;SUZUKI TAKAYA;MIMURA AKIO
分类号 H01L29/78;G02F1/136;G02F1/1368;H01L29/786 主分类号 H01L29/78
代理机构 代理人
主权项
地址