| 摘要 |
PURPOSE:To enhance running performance of carriers and to obtain also good chargeabilities by using superlattice structure formed by laminating specified thin films different in optical band gaps from each other for a barrier layer. CONSTITUTION:The electrophotographic sensitive body is formed by successively laminating on a conductive substrate 1 a barrier layer 2, a photoconductive layer 3, and a surface layer 4, and the barrier layer 2 is composed of the superlattice structure of 2 kinds of thin films formed by alternately laminating thin semiconductor films composed essentially of B and N. The thin silicon films contain a conductivity governing element, such as a element of group III or V of the periodic table, in an element concentration distribution changed in the layer thickness direction, thus permitting the obtained electrophotographic sensitive body to be superior in chargeability, low in residual potential, high in sensitivity in the wide wavelength region up to the near infrared region, and good in adhesion to the substrate. |
