发明名称 THIN FILM TRANSISTOR FOR LIQUID CRYSTAL DISPLAY
摘要 <p>PURPOSE:To prevent an image display part from having a picture element defect and deterioration in picture quality owing to a gate contact resistance defect by forming an electrode protective film of a motor layer on the surface of a gate signal line electrode. CONSTITUTION:A gate insulating film 10 is formed on a transparent insulated substrate 18, a gate electrode film 16 is formed, and then a source area 12, a drain area 13, and a channel area 11 are formed. Then a passivation film 17-1 is formed as the flank protective film for the source and drain areas 12 and 13 and gate insulating film 10. Here, an SiO2 film is formed by an atmospheric CVD method and then a normal Al-Si film is deposited as a gate signal line electrode 2, but an Al-Si base Si rich electrode protective layer 2-1 is formed continuously by sputtering on the surface layer as a protective layer. Then the insulating protective film 17 is formed and contact holes 6, 4, and 9 for the source area, drain area, and gate electrode are bored. Consequently, a defect of a screen and picture quality deterioration due to a gate signal electrode contact defect are precluded.</p>
申请公布号 JPS6459215(A) 申请公布日期 1989.03.06
申请号 JP19870215404 申请日期 1987.08.31
申请人 HITACHI LTD 发明人 OIKAWA SABURO;MIMURA AKIO;ONO KIKUO;KONISHI NOBUTAKE
分类号 H01L27/12;G02F1/136;G02F1/1368;H01L29/40;H01L29/78;H01L29/786 主分类号 H01L27/12
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