发明名称 PRODUCTION OF SILICON CARBIDE BASE PLATE
摘要 PURPOSE:To produce an SiC base plate of superior dimensional stability, of small warp, suitable for a mass production, and available for a functional material, etc., by placing an SiC green sheet in a recessed part of a specified graphite plate body, heaping several plates and firing the pile. CONSTITUTION:The graphite plate body A is obtained by providing the recessed part 2 of 70-80% depth to the thickness of the green sheet, leaving the surroundings 1, on the front surface of an isotropic graphite plate of about 150mm width, about 450mm length, and about 8mm thickness. Then, the surface of a polyester film is coated with a slurry containing the mixture of the SiC fine powder, alcohol, etc., and adhesives such as butyral resin, and is dried to obtain the SiC green sheet. By blanking this green sheet in the form of the recessed part 2, the green sheet 3 is obtained. This sheet 3 is placed in the recessed part 2 of the plate body A, and the body A with the sheet 3 is laminated to about ten stages and about 3kg/cm<2> graphite plate weight is placed on the top stage. The base plate 3' is kept to prevent the adhesion with the graphite, and fired at 1,800-2,200 deg.C to obtain the SiC base plate.
申请公布号 JPS6456366(A) 申请公布日期 1989.03.03
申请号 JP19870212265 申请日期 1987.08.26
申请人 SHOWA DENKO KK 发明人 HIRAMATSU ITSUKI;SAKAIDA TOSHIAKI
分类号 C04B35/565;C04B35/56;C04B35/64 主分类号 C04B35/565
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