(A) ;3, 4-DIHYDRO-2-ALKYL-3-OXO-N-ARYL-2H-(1) BENZOTHIENO (3, 2-E)-1, 2-THIADINE-4- CARBOXYAMIDE-1, 1-DIOXIDE

摘要

PURPOSE:To increase the dry etching resistance of an electron beam sensitive resist and to make the resist suitable for use in the manufacture of LSI, etc. by using a copolymer of a monomer having a phenol group and alkyl ester of methacrylic acid as the resist. CONSTITUTION:A polymer material (a copolymer represented by the formula) obtd. by copolymerizing about 0.001-0.2mol monomer having a phenol group such as 3,5-di-t-butyl-4-hydroxy-benzyl acrylate with 1mol alkyl ester of methacrylic acid having an alkyl group such as CH3 or C2H5, benzyl, phenyl, etc. is used as an electron beam sensitive resist. Said material is dissolved in toluene, applied to a silicon wafer by a spinner method or other method, and dried by heating at about 120 deg.C for about 60min to form a resist film. This film is irradiated with electron beams and developed. The remaining resist pattern is dry etched with CF4 or the like to obtain a micropattern with high sensitivity and high resolution.