| 摘要 |
PURPOSE:To form a superconducting thin film by a process capable of compensating the short supply of oxygen for the superconducting thin film by a method wherein a thin film body to be the superconducting thin film containing transition metal and oxygen is formed and then exposed to oxygen plasma to contain oxygen. CONSTITUTION:In order to form a superconducting thin film comprising an element containing transition metal and oxygen, oxygen is contained by exposing the thin film to oxygen plasma after forming the thin film body to be said superconducting thin film. For example, a sintered body target in composition of Y0.3 Ba0.7CuO2 is mounted on a high-frequency sputtering device; an Al2O3 substrate is fixed on the opposite position to the target; a mixed gas of O2 and Ar is led in holding the surface temperature of the substrate at 200 deg.C; and a Y-Ba-Cu-O film is deposited by high-frequency glow discharge. Finally, said Y-Ba-Cu-O film is plasma-processed, after annealing process at 900 deg.C in O2 atmosphere, in a vacuum vessel held at 200 deg.C in oxygen plasma atmosphere by leading-in O2 gas and the glow discharge. |
