发明名称 |
REDUCED PRESSURE EPITAXIAL DEPOSITION PROCESS |
摘要 |
A reduced pressure epitaxial deposition method is disclosed to maximize performance and leakage limited yield of devices formed in the epitaxial layer. The method includes specified prebake and deposition conditions designed to minimize arsenic (buried subcollector) and boron (buried isolation) autodoping effects when pressures below one atmosphere are selected in accordance with the subcollector-to-isolation area ratio. |
申请公布号 |
DE3476492(D1) |
申请公布日期 |
1989.03.02 |
申请号 |
DE19843476492 |
申请日期 |
1984.08.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GAIND, ARUN KUMAR;KULKARNI, SUBHASH BALKRISHNA;POPONIAK, MICHAEL ROBERT |
分类号 |
H01L21/205;H01L21/22;H01L21/74;(IPC1-7):H01L21/205;H01L21/34 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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