| 摘要 |
PURPOSE: To make a CMOS compatible polysilicon/silicon contact, having a low contact resistivity by after mounting a contact material on the surface of contact forming regions of a circuit, implanting ions inherent to the material species of the contact forming regions and annealing them. CONSTITUTION: After mounting a contact material 16 on surfaces 15 of contact forming regions 21, 22 of a circuit, ions inherent to the material species of the contact forming regions are implanted, and annealing 20 follows. Si ions 17, e.g., are implanted in a polysilicon-silicon boundary layer 15 with an implanting area density set to 1×10<15> cm<-2> and ion energy set to 70keV in case of a polysilicon layer 16 of about 100n, thick. At implanting of dopants 19a, 19b of As, Sb or P ions or B ions the area density and ion energy are set to 2×10<16> cm<-2> and 40keV. The annealing 20 is performed for 10min max. at about 950 deg.C.
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