| 摘要 |
PURPOSE:To manufacture a high speed device in which a semiconductor is integrated with a superconductor by forming a composite metal oxide on the semiconductor and an insulating film, and forming a superconducting thin film from the oxide film on a substrate with the thin oxide film on a crystalline insulating film as a species of superconducting characteristic. CONSTITUTION:A crystalline insulating thin film 2 made of sapphire, CaF2, etc. is formed by sputtering on a single crystalline Si substrate 1. Then, a composite metal film to become superconducting, such as a Y-Ba-Cu-O thin film 100 is formed by a magnetron sputtering method at predetermined substrate temperature, and a superconducting film made of a crystalline Y-Ba-Cu-O film 11 is formed on a thin film 40. Here, a Y-Ba-Cu-O film 12 on the Si substrate 1 does not exhibit superconducting characteristic in noncrystallinity. When the interval of the films 40 is set to a predetermined value, it is scanned in Y direction by a YAG laser L with the film 11 as a nucleus to form the film 12 to crystalline Y-Ba-Cu-O film 11a. Then, part of the film 11a is removed, the substrate 1 on the removed mark is etched to form a gate oxide film 2, a gate electrode, and electrodes 6, 6', thereby obtaining a superconducting transistor. |
