| 摘要 |
PURPOSE:To prevent the generation of crystal defects, disconnections, and deterioration of the interlayer resistance and also simplify the manufacturing process by forming a conductive layer, a first insulating layer, a first conductive film, and a second insulating film, and a second conductive film in this sequence on a groove formed on a semiconductor substrate. CONSTITUTION:On a P-type silicon substrate 101, a field oxide film 102 for separating an element, an N<->type diffusion layer 103, and a CVD-SiO2 layer 104 are stacked. A groove 105 is formed by, for example, etching the substrate 101 at a thickness of 3mum with the CVD-SiO2 layer 104 as a mask. The groove 105 is filled with a BPSG film 110, and a polycrystal silicon 111 is formed on this film and a polycrystal polysilicon film 109. Then it is oxidized to form an interlayer insulating film 113. According to the constitution, stress cannot be applied from the polycrystal silicon film 111 to the groove 105 at the time of forming the interlayer insulating film 113, thereby preventing such stress- induced crystal defects from being generated. |
