| 摘要 |
PURPOSE:To increase the unit area capacity of a capacitor and increase the degree of integration by forming several grooves or projections on the surface of a semiconductor layer of a capacitor part. CONSTITUTION:Several fine grooves are formed by means of PR technology and etching on the surface of a silicon substrate of a capacitor formed part where an insulating film 3 is bored. A silicon nitride film 6 is formed by the thermal oxidation method on this silicon surface and the surface of another silicon on the bored part of the insulating film 3, and then a silicon nitride film 7 is formed by the vapor phase growth method over the entire surface of a semiconductor substrate. After this, the silicon nitride film 7 and silicon nitride film 6 in the lead part of an N-type diffusion layer 2 which forms one of two electrodes of the capacitor part are bored again, and then the lead part of the N-type diffusion layer 2 and metal electrode layers 8 and 9 which would cover the entire surface of the capacitor part are formed. As a result, a capacitor having the N-type diffusion layer 2 as one electrode and the metal electrode layer 9 as another, forming the dielectric films 6 and 7 therebetween can be obtained. |
