| 摘要 |
PURPOSE:To improve optoelectronic transducing efficiency, by overlapping a first photovoltaic element, in which a transparent conductor film that is formed on a light transmitting substrate, an amorphous semiconductor layer and a light transmitting rear surface electrode are sequentially laminated, and a second photovoltaic element, in which a transparent conductor film, a I-III-VI semiconductor layer and a rear surface electrode are sequentially laminated. CONSTITUTION:A fluorine added SnO2 film 2 is formed on a glass substrate 1. Amorphous semiconductor layers 3 are formed in the order of a P-type layer, an I-type layer and an N-type layer on the film 2 by a glow discharge method. Then, as a rear surface electrode 4, an indium tin oxide film is formed on the amorphous semiconductor layer 3 by an electron beam evaporating method. A photovoltaic element which is formed by above described layers is made to be a first photovoltaic element 5. Meanwhile, on a glass substrate 6, a molybdenum layer 7, a CuInSe2 film as a I-III-VI semiconductor layer 8 and an In added ZnO film 9 are formed. A photovoltaic element which is formed of said layers is made to be a second photovoltaic element 10. The elements are heat-treated at 250 deg.C. Said first and second photovoltaic elements are bonded with light transmitting bonding agent 11 comprising polyvinyl butyral at both sides, i.e., the opposite sides of the glass substrates. |
