| 摘要 |
PURPOSE:To obtain the title grain-oriented silicon iron alloy thin band having a low iron loss at a low cost by cold-rolling a silicon iron alloy sheet to obtain a heat-treated intermediate material having a recrystallized structure which is secondarily cold-rolled, and then further heat-treating the material at higher than a prescribed temp. CONSTITUTION:The sheet of a silicon iron alloy contg. 2.5-4wt.% Si is cold- rolled, and the obtained intermediate material is heat-treated at >=950 deg.C to obtain a heat-treated material having a recrystallized structure. The heat-treated material is then cold-rolled at 70-80% draft in the same direction as the above- mentioned cold rolling to obtain a cold-rolled thin band having <=0.2mm thickness. The thin band is heat-treated at >=1,180 deg.C, or preferably at about 1,250 deg.C in consideration of the treating time. By this method, the desired grain-oriented silicon iron alloy thin band having the recrystallized-grain aggregate structure consisting essentially of the crystal grains having (110)[001] azimuth in the rolling direction. |
