| 摘要 |
PURPOSE:To correct the warpage of a substrate by a method wherein a glass substrate, whereon a photoconductive substance is vapor-deposited, is placed on a small suporting stand which is stably maintained in the atmosphere of activation processing and has a small thermal expansion coefficient, and an activation process is performed thereon. CONSTITUTION:A glass substrate, whereon a CdSe film is vapor-deposited, is placed on a sample-supporting stand consisting of a quartz plate with quartz legs with the vapor-deposited surface facing upward. Then, an activating process is performed by heating up the above in a quartz processing tube containing Se vapor and oxygen. Ti is vapor-deposited on the upper surface of the photoconductive layer of the glass substrate, whereon an activating process has been completed, and an electrode is formed by performing a photoetching. Then, a pair of electrodes are brought into a single unit by removing the CdSe located between the electrodes, and a photoconductive layer is formed as an independent photoelectric conversion element. |
