Method for fabricating insulated gate semiconductor device.

摘要

A method for fabricating an insulated gate semiconductor device comprises the steps of forming insulated gates on an n<->-layer (12) surface, forming p-well layers (13) in the n<->-layer using the insulated gates as masks, forming phosphosilicate glass layers (24) on the side walls of the insulated gates and diffusing the impurities from the phosphosilicate glass layers into the p-well layers to form n<+>-source (15) layer.