| 摘要 |
<p>PURPOSE:To facilitate defect correction by forming a superconductor material at >=1 of the gate terminals, source terminal, and drain terminals of a thin film transistor (TR) and the intersections of gate signal lines and source signal lines. CONSTITUTION:The superconductor material is formed at >=1 of the gate terminals 5a and 5b, source terminal, and drain terminals 4a and 4b of the thin film transistor (TFT) and the intersections of the gate signal lines 1a and 1b and source signal lines 2a and 2b. Namely, the superconductor material is formed at part of the active matrix array and a current is supplied to the superconductor material, which then enters a nonsuperconducting state and is burnt off. Consequently, the active matrix array is easily corrected.</p> |
