| 摘要 |
A semiconductor layer structure includes an alloy layer (13) of aluminum and silicon formed on a silicon substrate (11). The concentration of silicon contained in the aluminum-silicon alloy layer (13) is within a range of 10 to 75 weight percent. A barrier layer (14) is formed on top of the aluminum-silicon alloy layer, and a metallic layer (15) is formed on top of the barrier layer (14). |
