| 摘要 |
PURPOSE:To increase the current capacity of the titled MOS-FET by a method wherein, between the adjoining drain rows, drain minor regions are arranged in such a manner that their pitch is shifted so that they can be facing to each other, and the circumference of each drain minor region is surrounded by a source region. CONSTITUTION:A source region, surrourded by a sounce diffusion window 44', is provided in the well region 43 surrounded by a well diffusion window 43' and, at the same time, a number of drain minor regions 49'a and 49'b of narrow rectangle shape are arranged in said source rdgion. The drain minor regions 49'a constituting a drain row I and the drain minor regions 49b constituting a drain row II are to be arranged in such a manner that they are opposing each other by properly shifting. Also, a source contact region is arranged between drain minor regions. |
