| 摘要 |
A BiCMOS inverter circuit having complementary MOS transistors and complementary bipolar transistors enables a high speed inverting operation as well as high degree of integration when it is fabricated on a semiconductor chip. The inverter circuit may further include another complementary MOS transistors to allow the logic output to be advantageously full switched in the range of Vcc-0 V keeping the high speed operation. |
