| 摘要 |
PURPOSE:To uniformly form a very shallow high concentration impurity diffusion layer on the inner wall of a groove by a method wherein, after a CVD film which is doped by the use of an organic compound impurity diffusion source such as tetraethoxysilane/trimethyl phosphate and the like, has been uniformly applied to the inner wall surface of a groove, impurities are subjected to solid-phase diffusion from the impurity diffusion source using an arc lamp. CONSTITUTION:After an HTO film 2, to be used for prevention of silicon wafer diffusion and having the inner wall part 1 of very narrow and deep trench of 1.5mum in width and 15mum in depth, has been coated, it is placed in a vacuum furnace. Then, tetraethoxysilane (TEOS) and trimethyl phosphate (TMPO) are introduced into the vacuum furnace, and a phosphorus-added glass (TEOS PSG) film 3 is formed. Then, when light 4 an xenon arc lamp is projected, solid-phase diffusion is generated from the TEOS PSG 3, a very shallow and high concentration impurity diffusion layer 5 of surface concentration of 5X10<19>cm<-3>, junction depth of 0.13mum, can be formed uniformly on the side face and the bottom part of the inner wall part. |
