| 摘要 |
PURPOSE:To connect two semiconductors having different lattice constant, by depositing a metal film on one part of an Si substrate or a GaAs substrate, putting on this metal layer a substrate of InP for receiving light having a rear on which a metal layer of the same kind as that of the above-mentioned metal is deposited and heating a substrate to fuse the metal film on the substrate and the metal film on the rear of the substrate for receiving light. CONSTITUTION:An N<+>GaAs layer 2 is grown on a semi-insulating substrate 1 of GaAs by liquid growth. The N<+>GaAs layer 2 is etched to form islands for forming an electronic circuit element and for a photodetector. A source electrode 4, a drain electrode 5 and a metal film 12 are provided by depositing metals in the order of Au/Pt/Au on a part for the photodetector on the N<+>GaAs layer 2 and source and drain parts of the electronic circuit element. On the other hand, metals are deposited in the order of Au/Pt/Au on the rear of the N<+>InP layer 7 to attach a metal film 10. Then, the photodetector is put on the metal film 12 on the N<+>GaAs layer 2 and when heat is applied to the semi- insulating substrate 1 of GaAs, Au of the metal film 12 and the metal film 10 are dissolved, so that the photodetector is fixed to the semi-insulating substrate 1 of GaAs. |
