| 摘要 |
PURPOSE:To improve an access speed and to attain a high density by cutting or connecting, through a high resistance, the middle of the shorter line of a current channel flowing at the time of reading in a memory, which adopts a twisted common drive line sense amplifier. CONSTITUTION:The layout of a sense amplifier SAU in an upper array ARYU and a sense amplifier SAD in a lower array ARYD are mutually constituted in the reverse direction. When the SAUs in the ARYU are all activated, the current flows from a common drive-line CDL 2 through the SAU to a CDL 1. Next, when the SAU is turned off, and the SAD is activated, the current flow from the CDL 1 through the SAD to the CDL 2. Consequently, the channel of the CDL 1 where the current flows is longer, and the current does not flow to the CDL 2 and CDL 2' simultaneously. For this reason, by connecting the CDL 2 with the CDL 2' with the high resistance, a driving time constant can be minimized, and the access speed is improved. |
