发明名称 |
TECHNIQUE FOR THE GROWTH OF EPITAXIAL COMPOUND SEMICONDUCTOR FILMS |
摘要 |
<p>A technique is described for the deposition of group III-V compound semiconductor films in epitaxial form wherein the group V source material employed is in solid elemental or compound form. The prime advantage of such technique resides in the elimination of the need for the highly toxic arsine gas for this purpose while permitting the preparation of a product essentially free of contamination.</p> |
申请公布号 |
CA1250511(A) |
申请公布日期 |
1989.02.28 |
申请号 |
CA19850478159 |
申请日期 |
1985.04.02 |
申请人 |
BELL COMMUNICATIONS RESEARCH, INC. |
发明人 |
BHAT, RAJARAM;COX, HERBERT M. |
分类号 |
H01L21/205;C30B25/02;(IPC1-7):C30B29/42 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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