| 摘要 |
PURPOSE:To improve the utilization efficiency of a raw gas and to stably form a homogeneous deposited film with good reproducibility and at a high rate by providing a microwave inlet window in the wall of a vacuum vessel in the vicinity of both ends of a film forming cylindrical carrier, and furnishing an exhaust means in the vicinity of the window. CONSTITUTION:The inside of the vacuum vessel 101 is evacuated through an exhaust hole 104. The cylindrical substrate 105 is rotated, heated by a heater 107 to a prescribed temp., and kept at that temp. The raw gases such as SiH4, H2, and B2H6 are supplied into the vacuum vessel 101, and then the microwave generated from a microwave generator is passed through a waveguide 103 and introduced into a plasma generating region 106 through the microwave inlet window 102. The introduced raw gases are excited by the energy of the microwave, and dissociated to form neutral radical particles, ion particles, electrons, etc. The materials reacts with each other, and a deposited film is formed on the surface of the conductive cylindrical substrate 105 on the plasma generating region 106 side. |
