发明名称 |
PROCESS FOR PRODUCING POROUS REFRACTORY METAL LAYERS EMBEDDED IN SEMICONDUCTOR DEVICES AND DEVICES PRODUCED THEREBY |
摘要 |
<p>A process for fabricating a semiconductormetal-semiconductor electronic device and the device formed thereby from a semiconductor substrate is described. The substrate forms a first active region of the device. A porous layer of conductive material is deposited on the substrate preferably by molecular beam epitaxy forming a control region. A layer of a semiconductor material epitaxially matched to the substrate is then grown on the layer of conductive material so that the layer of semiconductor material forms a second active region of an electronic device.</p> |
申请公布号 |
CA1250670(A) |
申请公布日期 |
1989.02.28 |
申请号 |
CA19860519308 |
申请日期 |
1986.09.29 |
申请人 |
BELL COMMUNICATIONS RESEARCH, INC. |
发明人 |
DERKITS, GUSTAV E., JR.;HARBISON, JAMES P. |
分类号 |
H01L21/28;H01L21/335;H01L29/772;(IPC1-7):H01L21/36 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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