发明名称 PROCESS FOR PRODUCING POROUS REFRACTORY METAL LAYERS EMBEDDED IN SEMICONDUCTOR DEVICES AND DEVICES PRODUCED THEREBY
摘要 <p>A process for fabricating a semiconductormetal-semiconductor electronic device and the device formed thereby from a semiconductor substrate is described. The substrate forms a first active region of the device. A porous layer of conductive material is deposited on the substrate preferably by molecular beam epitaxy forming a control region. A layer of a semiconductor material epitaxially matched to the substrate is then grown on the layer of conductive material so that the layer of semiconductor material forms a second active region of an electronic device.</p>
申请公布号 CA1250670(A) 申请公布日期 1989.02.28
申请号 CA19860519308 申请日期 1986.09.29
申请人 BELL COMMUNICATIONS RESEARCH, INC. 发明人 DERKITS, GUSTAV E., JR.;HARBISON, JAMES P.
分类号 H01L21/28;H01L21/335;H01L29/772;(IPC1-7):H01L21/36 主分类号 H01L21/28
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