| 摘要 |
An image sensor having first wires formed in parallel on a first region of a substrate; a semiconductor layer formed on the first region covering the first wires and on a second region of said substrate; first electrodes arranged in line, connecting to the semiconductor layer of said second region; second electrodes arranged in line and connected to the semiconductor layer of said second region, and second wires extended from the first electrodes, the second wires connecting the first electrodes to said first wires at through holes formed in said semiconductor layer. The second electrodes are formed as a common electrode, and each of the first electrode, together with a portion of the second electrode facing the first electrodes and the semiconductor layer forming a photo-sensing element.
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