发明名称 |
Thin film overvoltage protection devices |
摘要 |
Solid-state overvoltage protection devices, preferably formed of deposited thin film, chalcogenide, threshold switching materials, typically include at least one elongated current conduction path through an elongated cross-sectional area of the threshold switching material. The cross-sectional area is formed with a length far exceeding the effective width thereof for distributing the transient current produced by overvoltage conditions over a relatively large area. In this manner, the concentration of localized heating effects can be avoided.
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申请公布号 |
US4809044(A) |
申请公布日期 |
1989.02.28 |
申请号 |
US19860936553 |
申请日期 |
1986.11.26 |
申请人 |
ENERGY CONVERSION DEVICES, INC. |
发明人 |
PRYOR, ROGER W.;FORMIGONI, NAPOLEON P.;OVSHINSKY, STANFORD R. |
分类号 |
H01L29/861;H01L29/866;H01L45/00;H02H9/04;(IPC1-7):H01L45/00;H01L29/44;H01L29/46;H01L29/86 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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