| 摘要 |
PURPOSE:To reduce the path length of secondary electrons in the horizontal direction generated in a photoresist and to prevent deterioration in sharpness of the photoresist, by perpendicularly applying a magnetic field to the surface of the photoresist. CONSTITUTION:A contact hole is formed in a PSG layer 2 in order to obtain contact with a diffused layer 7 on a silicon substrate 1. In this step, a magnetic field 4 in the vertical direction with respect to the silicon substrate 1 is applied on the substrate. The direction of the magnetic field can be directed upward or downward. Secondary electrons 6 are focused in the vertical direction with respect to the silicon substrate 1. Namely, the spread of the secondary electrons in the horizontal direction is suppressed. Thus, deterioration in sharpness of photoresist 3 can be prevented. |
