发明名称 MULTIWAVELENGTH LIGHT SOURCE SEMICONDUCTOR ELEMENT
摘要 <p>PURPOSE:To guide laser radiation with small loss by disposing a plurality of light emitting units on the surface of a semiconductor substrate in parallel to the surface of the substrate, and forming an element isolation layer between the units of a high resistance semiconductor layer having a refractive index lower than that of the material of the units. CONSTITUTION:A plurality of stripe-like light emitting units 11, 12 made of different material compositions are disposed in a surface parallel to the surface of a semiconductor substrate 16 on the substrate 16, and an element isolation layer 13 between the units 11 and 12 is formed of a high resistance semiconductor layer having lower refractive indices than those of the materials of the units 11, 12. Accordingly, an electric resistance between the adjacent units 11 and 12 is very large, its leakage current is small due to it, and the refractive indices are lower than those of the units 11, 12. Therefore, the units 11, 12 have waveguide structures. Thus, the emitted light can be efficiently guided.</p>
申请公布号 JPS6450494(A) 申请公布日期 1989.02.27
申请号 JP19870207894 申请日期 1987.08.20
申请人 NEC CORP 发明人 YANASE TOMOO
分类号 H01L33/08;H01L33/14;H01L33/30;H01L33/40;H01S5/00 主分类号 H01L33/08
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