| 摘要 |
PURPOSE:To increase the ratio of an occupied area by a gate region, and enable the large current operation of a semiconductor device, by providing the side-wall of a gate electrode with an insulating member, and insulating a source electrode from the gate electrode with the insulating member. CONSTITUTION:On the side-wall of a gate electrode 31, insulator 23 of 1mum thick being an insulating member is formed, and a source electrode 42 is insulated from the gate electrode 31 by the insulating film 23. The source electrode 42 is in low resistance contact with an N<+> layer 15 and a P-layer 13. The insulating film 23 can be formed by the following manner: after insulating gates 21, 31, 22 are processed, the P-layer 13 and the N<+> layer 15 are formed, and after an insulating film, SiO2, is deposited on the whole surface, anisotropic dry etching is performed. By self alignment, a contact hole of the source electrode 42 can be formed at the same time with a process wherein the insulating film 23 is left on the side-wall of the gate electrode 31. As a result, it is enabled that the ratio of a gate region B is enlarged, the region A is minimized, and the current density is increased by 20% or more.
|
